當(dāng)前位置：上海巨納科技有限公司>>二維材料>>硒化物晶體>>ReSe2 二硒化錸晶體（Rhenium Diselenide）

ReSe2 二硒化錸晶體（Rhenium Diselenide）

返回列表頁

參考價(jià)

面議

具體成交價(jià)以合同協(xié)議為準(zhǔn)

產(chǎn)品型號

品牌

廠商性質(zhì)其他

所在地上海

在線詢價(jià) 收藏產(chǎn)品查看聯(lián)系電話

聯(lián)系方式：袁文軍查看聯(lián)系方式

更新時(shí)間：2024-02-12 14:34:12瀏覽次數(shù)：96次

聯(lián)系我時(shí)，請告知來自環(huán)保在線

產(chǎn)品分類 品牌分類

  二維材料

二維材料粉末

二維材料溶液

碲化物晶體

硒化物晶體

硫化物晶體

絕緣體

鈣鈦礦

異質(zhì)結(jié)

MOFS材料

二維材料薄膜

黑磷

六方氮化硼

其他二維材料

全部產(chǎn)品列表

暫無信息

上海巨納科技有限公司

經(jīng)營模式：其他

商鋪產(chǎn)品：574條

所在地區(qū)：

聯(lián)系人：袁文軍

詢價(jià) 給他留言

產(chǎn)品簡介

簡要描述：Single crystal ReSe? （Rhenium diselenide） crystals are developed at our facilities using chemical vapor transport or flux zone technique methods after 8 years of growth optimization to ensure ani......

詳細(xì)介紹

Single crystal ReSe? (Rhenium diselenide) crystals are developed at our facilities using chemical vapor transport or flux zone technique methods after 8 years of growth optimization to ensure anisotropic properties. Our ReSe2 crystals display impressive structural anisotropy from bulk down to monolayers as evidenced by TEM and angle resolved Raman spectroscopy measurements (see XRD, TEM, Raman, PL, and other figures below). Our ReSe2 crystals that guarantees crystalline, optical, and electronic anisotropy at large scales. Crystals are rather large in size, perfectly layered, and ready for exfoliation. Our R&D team also provides you with transfer technique to boost your monolayer yield rate up to 95%. If your research needs doped ReSe2 crystals, we can introduce Mo, Au, Nb, and other dopants.
Typical characteristics of ReSe2 crystals from 2Dsemiconductors

Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.